BUK7528-55 datasheet(4/8 Pages) PHILIPS

Part #	BUK7528-55

Description	TrenchMOS transistor Standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK7528-55

Standard level FET

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 10 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

024

68

10

0

20

40

60

80

100

ID/A

VDS/V

VGS/V =

16

14

12

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

6.0

5.5

5.0

4.5

0

1020

3040

5060

7080

0

5

10

15

20

gfs/S

ID/A

0

10

2030

405060

70

20

25

30

35

40

45

RDS(ON)/mOhm

ID/A

VGS/V =

6

6.5

7

8

9

10

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

BUK959-60

Tmb / degC

Rds(on) normlised to 25degC

a

0

2468

10

12

0

10

20

30

40

50

60

70

80

ID/A

VGS/V

Tj/C =

175

25

BUK759-60

-100

-50

0

50

100

150

200

0

1

2

3

4

5

Tj / C

VGS(TO) / V

max.

typ.

min.

April 1998

4

Rev 1.100

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