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TBN4226E Datasheet(PDF) 1 Page - AUK corp |
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TBN4226E Datasheet(HTML) 1 Page - AUK corp |
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1 / 6 page  1 □ Features - High gain bandwidth product f T = 6 GHz at VCE = 3 V, IC = 7 mA f T = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain |S 21| 2 = 9.0 dB at V CE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at V CE = 3 V, IC = 7 mA, f = 1 GHz □ Applications - VHF and UHF low noise amplifier - Wide band amplifier □ Absolute Maximum Ratings (T A = 25 ℃) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature ℃ Tstg -65 ~ 150 V BVEBO 3 V BVCEO 8 Tj Parameter Symbol Ptot 150 Ratings Unit BVCBO 20 V 150 ℃ IC 100 mA mW Caution : Electro Static Discharge sensitive device SOT-323 Pin Configuration 1. Base 2. Emitter 3. Collector Unit in mm 2.1±0.1 1.25±0.05 1 2 3 0.1 Min. Semiconductor TBN4226 Series Si NPN Transistor |
Similar Part No. - TBN4226E |
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Similar Description - TBN4226E |
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