MJE15034_06 datasheet(1/5 Pages) ONSEMI

Part #	MJE15034

Description	4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2006 − Rev. 3

1

Publication Order Number:

MJE15034/D

MJE15034 NPN,

MJE15035 PNP

Preferred Device

Complementary Silicon

Plastic Power Transistors

TO−220, NPN & PNP Devices

Complementary silicon plastic power transistors are designed for

use as high−frequency drivers in audio amplifiers.

Features

• hFE = 100 (Min) @ IC = 0.5 Adc

= 10 (Min) @ IC = 2.0 Adc

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035

• High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

• TO−220AB Compact Package

• Epoxy meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model: C

Human Body Model: 3B

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

350

Vdc

Collector−Base Voltage

VCB

350

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

4.0

8.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

50

0.40

W

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

2.5

_C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

350 VOLTS, 50 WATTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MJE15034

TO−220AB

50 Units / Rail

TO−220AB

CASE 221A

STYLE 1

1

2

3

4

MARKING DIAGRAM

MJE1503x

= Device Code

x = 4 or 5

A

= Location Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MJE1503xG

AYWW

http://onsemi.com

MJE15035

TO−220AB

50 Units / Rail

MJE15035G

TO−220AB

(Pb−Free)

50 Units / Rail

MJE15034G

TO−220AB

(Pb−Free)

50 Units / Rail

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