MC74HC165A

http://onsemi.com

4

Unit

Guaranteed Limit

V

Test Conditions

Parameter

Symbol

Unit

v 125_C

v 85_C

– 55 to 25

_C

V

Test Conditions

Parameter

Symbol

Maximum Low−Level Output

Voltage

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

3.0

4.5

6.0

0.26

0.26

0.26

0.33

0.33

0.33

0.40

0.40

0.40

Maximum Input Leakage

Current

6.0

± 0.1

± 1.0

± 1.0

mA

Maximum Quiescent Supply

Current (per Package)

6.0

4

40

160

mA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book

(DL129/D).

Symbol

Parameter

V

Guaranteed Limit

Unit

– 55 to 25

_C

v 85_C

v 125_C

Maximum Clock Frequency (50% Duty Cycle)

(Figures 1 and 8)

2.0

3.0

4.5

6.0

6

18

30

35

4.8

17

24

28

4

15

20

24

MHz

(Figures 1 and 8)

2.0

3.0

4.5

6.0

150

52

30

26

190

63

38

33

225

65

45

38

ns

(Figures 2 and 8)

2.0

3.0

4.5

6.0

175

58

35

30

220

70

44

37

265

72

53

45

ns

(Figures 3 and 8)

2.0

3.0

4.5

6.0

150

52

30

26

190

63

38

33

225

65

45

38

ns

Maximum Output Transition Time, Any Output

(Figures 1 and 8)

2.0

3.0

4.5

6.0

75

27

15

13

95

32

19

16

110

36

22

19

ns

Maximum Input Capacitance

−

10

10

10

pF

NOTES:

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

Power Dissipation Capacitance (Per Package)*

Typical @ 25

pF

40

ON Semiconductor High−Speed CMOS Data Book (DL129/D).