MC74HC273ADTR2G datasheet(4/10 Pages) ONSEMI

Part #	MC74HC273ADTR2G

Description	Octal D Flip?묯lop with Common Clock and Reset High?뭁erformance Silicon?묰ate CMOS

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MC74HC273A

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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Unit

v 125_C

v 85_C

– 55 to

25

_C

VCC

V

Test Conditions

Parameter

Symbol

Iin

Maximum Input Leakage Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

mA

IOZ

Maximum Three−State Leakage

Current

Output in High−Impedance State

Vin = VIL or VIH

Vout = VCC or GND

6.0

± 0.5

± 5.0

± 10

mA

ICC

Maximum Quiescent Supply

Current (per Package)

Vin = VCC or GND

Iout = 0 mA

6.0

4.0

40

160

mA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book

(DL129/D).

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

Symbol

Parameter

VCC

V

Guaranteed Limit

Unit

– 55 to

25

_C

v 85_C

v 125_C

fmax

Maximum Clock Frequency (50% Duty Cycle)

(Figures 1 and 4)

2.0

3.0

4.5

6.0

15

30

35

5.0

10

24

28

4.0

8.0

20

24

MHz

tPLH

tPHL

Maximum Propagation Delay, Clock to Q

(Figures 1 and 4)

2.0

3.0

4.5

6.0

145

90

29

25

180

120

36

31

220

140

44

38

ns

tPHL

Maximum Propagation Delay, Reset to Q

(Figures 2 and 4)

2.0

3.0

4.5

6.0

145

90

29

25

180

120

36

31

220

140

44

38

ns

tTLH

tTHL

Maximum Output Transition Time, Any Output

(Figures 1 and 4)

2.0

3.0

4.5

6.0

75

27

15

13

95

32

19

16

110

36

22

19

ns

Cin

Maximum Input Capacitance

10

pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON

Semiconductor High−Speed CMOS Data Book (DL129/D).

CPD

Power Dissipation Capacitance (Per Enabled Output)*

Typical @ 25

°C, VCC = 5.0 V

pF

48

* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the

ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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