BUK866-400IZ datasheet(6/8 Pages) PHILIPS

Part #	BUK866-400IZ

Description	Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor

BUK866-400 IZ

Protected Logic-Level IGBT

Fig.19. Typical Turn-off dV

CE/dt vs. RG

conditions: T

j=125 ˚C; IC=8 A; VCL=300 V; LC=5 mH.

Fig.20. Test circuit for inductive load switching times.

Fig.21. Definitions of inductive load switching times.

Fig.22. Reverse Breakdown Voltage

V

(BR)ECS = f(Tj); conditions: IEC = 50 mA

Fig.23. Test circuit for clamped turn-off energy test

Fig.24. Definition of clamping energy E

CER

0

2

4

Rg / kOhm

dVce/dt (V/us)

PMG35A

150

100

50

0

1

35

0

100

Tj / degC

V(BR)ECS / V

BUK856-400IZ

35

30

25

20

min.

typ.

-50

50

150

: adjust for correct Ic

Vcc

V

Lc

D.U.T.

R

0V

t p

0R1

G

VGE

IC measure

CL

: adjust for correct Ic

Vcc

Lc

D.U.T.

R

0V

t p

0R1

G

V

IC measure

GE

C

CE

t

td(off)

tf

tc

10%

90%

10%

90%

V

I

t

V(cl)cer

I

Vce

Vge

V

Ecer

Ic

Vce x Ic

P

t

December 1996

6

Rev. 1.100

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BUK866-400IZ Datasheet(PDF) 6 Page - NXP Semiconductors

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