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2SD1816-S-TM3-B-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SD1816-S-TM3-B-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R209-011,B TYPICAL CHARACTERISTICS 0 01 5 4 3 2 1 2 3 4 5 Ic-VCE Collector to Emitter Voltage,VCE(V) 50m A 40m A 30m A 20m A 10mA 5mA 2mA IB=0 70mA 60mA 80mA 90mA 100mA 0 0 10 50 40 30 20 0.4 0.8 1.2 1.6 2.0 Ic -VCE Collector to Emitter Voltage,VCE(V) 7mA 6mA 5mA 4mA 3mA 2mA 1mA IB=0 8mA 0 00.2 0.8 0.6 0.4 1 2 Base to Emitter Voltage ,VBE (V) Ic -VBE 5 4 3 1.0 1.2 Ta=75℃ 55 3 2 Collector Current,IC(A) 0.01 2 3 5 7 1000 VCE=5V 2 3 5 7 100 5 7 10 5 3 2 0.1 5 3 2 1.0 10 VCE=5V hFE -Ic -25℃ 25℃ Ta=75℃ 25℃ -25℃ 7 5 3 2 100 0.1 7 5 3 2 1.0 3 2 7 2 3 5 fT -I c Colletcor Current, Ic(A) 2 3 5 10 2 1.0 77 2 10 Cob- VCB Colletcor to Base Voltage, VCB (V) 5 VCE=10V 7 5 3 5 3 5 7 2 3 2 3 5 7 5 100 100 2 f=1MHZ |
Similar Part No. - 2SD1816-S-TM3-B-R |
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