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2SC2881 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SC2881 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTC2SC2881 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R208-032,A TYPICAL PERFORMANCE CHARACTERISTICS 100 10 Collector current, Ic (mA) 30 0.05 0.3 0.1 3 300 1 VCE(sat) - Ic Common emitter Ic/IB=10 0.5 0.03 1000 RL=8次 Ta=100℃ 25 -25 0.6 0.2 Base-emitter voltage VBE (V) 0.4 0.4 0.8 0.6 0 0.8 1.0 Ic - VBE 0 0.2 1.0 1.2 Common emitter VCE=5V RL=8次 Ta=100℃ 25 -25 12 4 Collector-emitter voltage VCE (V) 8 200 600 400 0 16 800 RL=8次 IB=1mA 0 Common emitter Ta=25℃ Ic - VCE 2 3 5 10 20 50 0 100 10 Collector current Ic (mA) 30 50 300 100 3 300 1000 hFE - Ic 10 Common emitter VCE=5V 500 30 1000 RL=8次 Ta=100℃ 25 -25 10 1 Collector-emitter voltage, VCE (V) 3 30 1000 500 0.3 30 3000 1 10 100 300 Safe Operating Area 300 100 50 5 3 *:Single nonrepetitive pulse Ta=25℃ Curves must be derated linearly with increase in temperature Tested without a substrate Ic max (pulse)* Ic max (continuous) 100ms* 10ms* 1ms* DC operation Ta=25℃ 60 20 Ambient temperature, Ta (℃) 40 0.6 1.0 0.8 0 80 1.2 Pc - Ta 0 0.4 100 120 (1) Mounted on ceramic substrate ( 250mm × 0.8t ) (2) No heat sink 2 0.2 140 160 (1) (2) |
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