BUK9840-55 datasheet(2/9 Pages) PHILIPS

Part #	BUK9840-55

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK9840-55

Logic level FET

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-sp

From junction to solder point

Mounted on any PCB

12

15

K/W

R

th j-amb

From junction to ambient

Mounted on PCB of Fig.18

-

70

K/W

STATIC CHARACTERISTICS

T

j= 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

55

-

V

voltage

T

j = -55˚C

50

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1.0

1.5

2.0

V

T

j = 150˚C

0.6

-

V

T

j = -55˚C

-

2.3

V

I

DSS

Zero gate voltage drain current

V

DS = 55 V; VGS = 0 V;

-

0.05

10

µA

T

j = 150˚C

-

100

µA

I

GSS

Gate source leakage current

V

GS = ±5 V

-

0.02

1

µA

T

j = 150˚C

-

5

µA

±V

(BR)GSS

Gate source breakdown voltage I

G = ±1 mA

10

-

V

R

DS(ON)

Drain-source on-state

V

GS = 5 V; ID = 5 A

-

30

40

m

Ω

resistance

T

j = 150˚C

-

74

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 5 A; Tj = 25˚C

11

19

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

1050

1400

pF

C

oss

Output capacitance

-

205

245

pF

C

rss

Feedback capacitance

-

110

150

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 9 A;

-

17

25

ns

t

r

Turn-on rise time

V

GS = 5 V; RG = 10 Ω;

-

65

100

ns

t

d off

Turn-off delay time

-

70

105

ns

t

f

Turn-off fall time

T

j = 25˚C

-

70

105

ns

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = -55 to 175˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

T

sp = 25˚C

-

10.7

A

current

I

DRM

Pulsed reverse drain current

T

sp = 25˚C

-

40

A

V

SD

Diode forward voltage

I

F = 5 A; VGS = 0 V

-

0.85

1.1

V

t

rr

Reverse recovery time

I

F = 5 A; -dIF/dt = 100 A/µs;

-

45

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 30 V

-

.3

-

µC

January 1998

2

Rev 1.000

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