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MPSA42L-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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MPSA42L-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page  MPSA42/43 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R208-034,B ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MPSA42 300 V Collector-Base Voltage MPSA43 VCBO 200 V MPSA42 300 V Collector-Emitter Voltage MPSA43 VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current Ic 500 mA SOT-89 500 mW Collector Dissipation (Ta=25 ) ℃ TO-92 Pc 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT MPSA42 300 V Collector-Base Breakdown Voltage MPSA43 BVCBO Ic=100 µA, I E=0 200 MPSA42 300 V Collector-Emitter Breakdown Voltage MPSA43 BVCEO Ic=1mA, IB=0 200 Emitter-Base Breakdown Voltage BVEBO IE=100µA, Ic=0 6 V MPSA42 VCB=200V, IE=0 100 nA Collector Cut-Off Current MPSA43 ICBO VCB=160V, IE=0 100 MPSA42 VBE=6V, Ic=0 100 nA Emitter Cut-Off Current MPSA43 IEBO VBE=4V, Ic=0 100 DC Current Gain hFE VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA 80 80 80 300 Collector-Emitter Saturation Voltage VCE(SAT) Ic=20mA, IB=2mA 0.2 V Base-Emitter Saturation Voltage VBE(SAT) Ic=20mA, IB=2mA 0.90 V Current Gain Bandwidth Product fT VCE=20V, Ic=10mA, f=100MHz 50 MHz MPSA42 3 pF Collector Base Capacitance MPSA43 Ccb VCB=20V, IE=0 f=1MHz 4 pF |
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