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2N5089 Datasheet(PDF) 1 Page - Unisonic Technologies |
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2N5089 Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040,A NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µA to 50mA. TO-92 1 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS (TA=25°C, unless otherwise noted) RATING SYMBOL 2N5088 2N5089 UNIT Collector-Emitter voltage VCEO 30 25 V Collector-Base voltage VCBO 35 30 V Emitter-base voltage VEBO 4.5 V Collector current-continuous Ic 100 mA Operating and Storage Junction Temperature Range Tj, Tstg -55 ~ +150 °C Note 1: These ratings are based on a maximum junction temperature of 150 degrees C. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL MAX UNIT Total Device Dissipation Derate above 25 °C PD 625 5 mW mW/ °C Thermal Resistance, Junction to Case RθJC 83.3 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W |
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