UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR

QW-R201-040,A

NPN GENERAL PURPOSE AMPLIFIER

DESCRIPTION

The device is designed for low noise, high gain, general

purpose amplifier applications at collector currents from

1

µA to 50mA.

TO-92

1

1:EMITTER 2:BASE 3:COLLECTOR

RATING

SYMBOL

2N5088

2N5089

UNIT

Collector-Emitter voltage

30

25

V

Collector-Base voltage

35

30

V

Emitter-base voltage

4.5

V

Collector current-continuous

Ic

100

mA

Operating and Storage

Junction Temperature Range

-55 ~ +150

°C

Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.

Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

PARAMETER

SYMBOL

MAX

UNIT

Total Device Dissipation

Derate above 25

°C

625

5

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to

Ambient

200

°C/W