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BQ4015MS-70 Datasheet(PDF) 7 Page - Texas Instruments

Part # BQ4015MS-70
Description  512Kx8 Nonvolatile SRAM
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ4015MS-70 Datasheet(HTML) 7 Page - Texas Instruments

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bq4015/Y
Write Cycle (TA = TOPR,VCCmin
≤ VCC ≤ VCCmax)
Symbol
Parameter
-70
-85/-85N
-120/-120N
Units
Conditions/Notes
Min.
Max.
Min.
Max.
Min.
Max.
tWC
Write cycle time
70
-
85
-
120
-
ns
tCW
Chip enable to end of write
65
-
75
-
100
-
ns
(1)
tAW
Address valid to end of write
65
-
75
-
100
-
ns
(1)
tAS
Address setup time
0
-
0
-
0
-
ns
Measured from address
valid to beginning of
write. (2)
tWP
Write pulse width
55
-
65
-
85
-
ns
Measured from begin-
ning of write to end of
write. (1)
tWR1
Write recovery time
(write cycle 1)
5-5-
5
-
ns
Measured from WE go-
ing high to end of write
cycle. (3)
tWR2
Write recovery time
(write cycle 2)
15-15-
15
-
ns
Measured from CE going
high to end of write cy-
cle. (3)
tDW
Data valid to end of write
30
-
35
-
45
-
ns
Measured to first low-
to-high transition of ei-
ther CE or WE.
tDH1
Data hold time
(write cycle 1)
0-0-
0
-
ns
Measured from WE go-
ing high to end of write
cycle. (4)
tDH2
Data hold time
(write cycle 2)
10-10-
10
-
ns
Measured from CE going
high to end of write cy-
cle. (4)
tWZ
Write enabled to output in
high Z
0
25
0
30040
ns
I/O pins are in output
state. (5)
tOW
Output active from end of
write
5-0-
0
-
ns
I/O pins are in output
state. (5)
Notes:
1.
A write ends at the earlier transition of CE going high and WE going high.
2.
A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition
of CE going low and WE going low.
3.
Either tWR1 or tWR2 must be met.
4.
Either tDH1 or tDH2 must be met.
5.
If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in
high-impedance state.


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