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CAT24WC04GYETE13F Datasheet(PDF) 3 Page - Catalyst Semiconductor |
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CAT24WC04GYETE13F Datasheet(HTML) 3 Page - Catalyst Semiconductor |
3 / 14 page CAT24WC01/02/04/08/16 3 Doc. No. 1022, Rev. N © 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. The write cycle time is the time from a valid stop condition of a write sequence to the end of the internal program/erase cycle. During the write cycle, the bus interface circuits are disabled, SDA is allowed to remain high, and the device does not respond to its slave address. Write Cycle Limits Symbol Parameter Min. Typ. Max Units tWR Write Cycle Time 10 ms Power-Up Timing(1)(2) Symbol Parameter Max. Units tPUR Power-up to Read Operation 1 ms tPUW Power-up to Write Operation 1 ms A.C. CHARACTERISTICS VCC = +1.8V to +5.5V, unless otherwise specified. Read & Write Cycle Limits l o b m y Sr e t e m a r a P 8 . 1 - X X C W 4 2 T A CX X C W 4 2 T A C s t i n U V 5 . 5 - V 8 . 1V 5 . 5 - V 5 . 2V 5 . 5 - V 5 . 4 . n i M. x a M. n i M. x a M. n i M. x a M F L C S y c n e u q e r F k c o l C0 0 10 0 10 0 4z H k TI ) 1 ( t a t n a t s n o C e m i T n o i s s e r p p u S e s i o N s t u p n I A D S , L C S 0 0 20 0 20 0 2s n t A A K C A d n a t u O a t a D A D S o t w o L L C S t u O 5 . 35 . 31 µs t F U B ) 1 ( e r o f e B e e r F e b t s u M s u B e h t e m i T t r a t S n a C n o i s s i m s n a r T w e N a 7 . 47 . 42 . 1 µs t A T S : D H e m i T d l o H n o i t i d n o C t r a t S4 4 6 . 0 µs t W O L d o i r e P w o L k c o l C7 . 47 . 42 . 1 µs t H G I H d o i r e P h g i H k c o l C4 4 6 . 0 µs t A T S : U S e m i T p u t e S n o i t i d n o C t r a t S ) n o i t i d n o C t r a t S d e t a e p e R a r o f ( 7 . 47 . 46 . 0 µs t T A D : D H e m i T d l o H n I a t a D0 0 0 s n t T A D : U S e m i T p u t e S n I a t a D0 50 50 5s n tR ) 1 ( e m i T e s i R L C S d n a A D S1 1 3 . 0 µs tF ) 1 ( e m i T ll a F L C S d n a A D S0 0 30 0 30 0 3s n t O T S : U S e m i T p u t e S n o i t i d n o C p o t S4 4 6 . 0 µs t H D e m i T d l o H t u O a t a D0 0 10 0 10 0 1s n |
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