STS8C5H30L_07 datasheet(4/14 Pages) STMICROELECTRONICS

Part #	STS8C5H30L

Description	N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET

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4 / 14 page

Electrical characteristics

STS8C5H30L

4/14

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

n-ch

p-ch

30

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

n-ch

1

µA

VDS=Max rating,

TC=125°C

p-ch

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±16V

n-ch

p-ch

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

n-ch

p-ch

1

11.6

2.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 4A

VGS = 10V, ID = 2.5A

VGS = 4.5V, ID = 4A

VGS = 4.5V, ID = 2.5A

n-ch

p-ch

n-ch

p-ch

0.018

0.045

0.020

0.070

0.022

0.055

0.025

0.075

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Forward transconductance

VDS = 15V, ID= 4A

VDS = 15V, ID= 2.5A

n-ch

p-ch

8.5

10

S

Ciss

Input capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

n-ch

p-ch

857

1350

pF

Coss

Output capacitance

n-ch

p-ch

147

490

pF

Crss

Reverse transfer

capacitance

n-ch

p-ch

20

130

pF

Qg

Total gate charge

N-channel

VDD=24V ID=8A

VGS=5V

P-channel

VDD = 24V ID = 4A

VGS= 5V

(see Figure 26)

n-ch

p-ch

7

12.5

10

16

nC

Qgs

Gate-source charge

n-ch

p-ch

2.5

5

nC

Qgd

Gate-drain charge

n-ch

p-ch

2.3

3

nC

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