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STS8C5H30L Datasheet(PDF) 4 Page - STMicroelectronics |
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STS8C5H30L Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STS8C5H30L 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 n-ch p-ch 30 30 V V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating n-ch 1 µA VDS=Max rating, TC=125°C p-ch 10 µA IGSS Gate-body leakage current (VDS = 0) VGS = ±16V VGS = ±16V n-ch p-ch ±100 ±100 nA nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA n-ch p-ch 1 11.6 2.5 V V RDS(on) Static drain-source on resistance VGS = 10V, ID = 4A VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 4A VGS = 4.5V, ID = 2.5A n-ch p-ch n-ch p-ch 0.018 0.045 0.020 0.070 0.022 0.055 0.025 0.075 Ω Ω Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Forward transconductance VDS = 15V, ID= 4A VDS = 15V, ID= 2.5A n-ch p-ch 8.5 10 S S Ciss Input capacitance VDS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch 857 1350 pF pF Coss Output capacitance n-ch p-ch 147 490 pF pF Crss Reverse transfer capacitance n-ch p-ch 20 130 pF pF Qg Total gate charge N-channel VDD=24V ID=8A VGS=5V P-channel VDD = 24V ID = 4A VGS= 5V (see Figure 26) n-ch p-ch 7 12.5 10 16 nC nC Qgs Gate-source charge n-ch p-ch 2.5 5 nC nC Qgd Gate-drain charge n-ch p-ch 2.3 3 nC nC |
Similar Part No. - STS8C5H30L_07 |
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Similar Description - STS8C5H30L_07 |
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