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BY614 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BY614 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1996 Sep 26 3 Philips Semiconductors Product specification Miniature high-voltage soft-recovery rectifier BY614 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.5. For more information please refer to the “General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 50 mA; Tj =Tj max; see Fig.4 −− 6V IR reverse current VR =VRWmax; Tj = 120 °C −− 3 µA Qr recovery charge when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.6 −− 1nC tf fall time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.6 100 −− ns trr reverse recovery time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.6 −− 300 ns Cd diode capacitance VR =0V; f=1MHz − 2 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 100 K/W Rth j-a thermal resistance from junction to ambient note 1 155 K/W |
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