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BYD12G Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYD12G Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1998 Dec 03 4 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series GRAPHICAL DATA a = 1.57; VR =VRRMmax; δ = 0.5. Device mounted as shown in Fig.6. Fig.2 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 1 0 0.2 0.4 0.6 0.8 40 80 120 IF(AV) (A) 160 MDA808 Tamb (°C) Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage 0 DG J K M 400 800 1200 200 0 100 50 150 MGC736 Tj VR, VRRM (V) ( C) o Solid line: Tj =25 °C. Dotted line: Tj = 175 °C. Fig.4 Forward current as a function of forward voltage; typical values. handbook, halfpage 0 0.5 1 VF (V) 2 10 0 8 1.5 6 4 2 MDA817 IF (A) Fig.5 Reverse current as a function of junction temperature; typical values. VR =VRRMmax. handbook, halfpage 200 0 40 80 120 160 102 10 1 10−1 10−2 MDA822 Tj (°C) IR ( µA) |
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