1997 Nov 25

4

Philips Semiconductors

Product specification

Ultra fast low-loss

controlled avalanche rectifiers

BYG80 series

THERMAL CHARACTERISTICS

Notes

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.27.

For more information please refer to the

“General Part of associated Handbook”.

reverse avalanche

breakdown voltage

BYG80A

55

−−

V

BYG80B

110

−−

V

BYG80C

165

−−

V

BYG80D

220

−−

V

BYG80F

330

−−

V

BYG80G

440

−−

V

BYG80J

675

−−

V

reverse current

see Figs 24 and 25

−−

10

µA

reverse current

see Figs 24 and 25

BYG80A to D

−−

100

µA

BYG80F; BYG80G and J

−−

150

µA

reverse recovery time

see Fig.29

BYG80A to D

−−

25

ns

BYG80F; BYG80G and J

−−

50

ns

diode capacitance

BYG80A to D

−

90

−

pF

BYG80F; BYG80G

−

70

−

pF

BYG80J

−

65

−

pF

maximum slope of reverse

recovery current

see Fig.28

BYG80A to D

−−

3A/

µs

BYG80F; BYG80G and J

−−

4A/

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to tie-point

25

K/W

thermal resistance from junction to ambient

note 1

100

K/W

note 2

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dI

R

dt

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