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BYM36D Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYM36D Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page 1996 Sep 18 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =55 °C; see Figs 8; 9 and 10 BYM36A to C − 37 A BYM36D and E − 33 A BYM36F and G − 27 A IFRM repetitive peak forward current Tamb =65 °C; see Figs 11; 12 and 13 BYM36A to C − 13 A BYM36D and E − 11 A BYM36F and G − 10 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 65 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 17 and 18 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 3 A; Tj =Tj max; see Figs 19; 20 and 21 BYM36A to C −− 1.22 V BYM36D and E −− 1.28 V BYM36F and G −− 1.24 V VF forward voltage IF =3A; see Figs 19; 20 and 21 BYM36A to C −− 1.60 V BYM36D and E −− 1.78 V BYM36F and G −− 1.57 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYM36A 300 −− V BYM36B 500 −− V BYM36C 700 −− V BYM36D 900 −− V BYM36E 1100 −− V BYM36F 1300 −− V BYM36G 1500 −− V IR reverse current VR =VRRMmax; see Fig.22 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.22 −− 150 µA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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