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BYM36G Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYM36G Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page 1996 Sep 18 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25. For more information please refer to the “General Part of associated Handbook”. trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig. 26 BYM36A to C −− 100 ns BYM36D and E −− 150 ns BYM36F and G −− 250 ns Cd diode capacitance f = 1 MHz; VR =0V; see Figs 23 and 24 BYM36A to C − 85 − pF BYM36D and E − 75 − pF BYM36F and G − 65 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.27 BYM36A to C −− 7A/ µs BYM36D and E −− 6A/ µs BYM36F and G −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
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