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AD8130ARZ Datasheet(PDF) 9 Page - Analog Devices |
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AD8130ARZ Datasheet(HTML) 9 Page - Analog Devices |
9 / 40 page AD8129/AD8130 Rev. C | Page 9 of 40 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 26.4 V Power Dissipation Refer to Figure 4 Input Voltage (Any Input) −VS − 0.3 V to +VS + 0.3 V Differential Input Voltage (AD8129) VS ≥ ±11.5 V ±0.5 V Differential Input Voltage (AD8129) VS < ±11.5 V ±6.2 V Differential Input Voltage (AD8130) ±8.4 V Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for the device soldered in a circuit board in still air. Table 5. Thermal Resistance Package Type θJA Unit 8-Lead SOIC/4-Layer 121 °C/W 8-Lead MSOP/4-Layer 142 °C/W Maximum Power Dissipation The maximum safe power dissipation in the AD8129/AD8130 packages is limited by the associated rise in junction temp- erature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8129/AD8130. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices, potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The power dissipated due to the load drive depends upon the particular application. The power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. RMS voltages and currents must be used in these calculations. Airflow reduces θJA. In addition, more metal directly in contact with the package leads from metal traces through holes, ground, and power planes reduces the θJA. Figure 4 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead SOIC (121°C/W) and MSOP (θJA = 142°C/W) packages on a JEDEC standard 4-layer board. θJA values are approximations. AMBIENT TEMPERATURE (°C) 1.75 1.50 1.00 1.25 0.50 0.25 0.75 0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120 SOIC MSOP Figure 4. Maximum Power Dissipation vs. Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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