NCP5218MNR2G datasheet(8/31 Pages) ONSEMI

Part #	NCP5218MNR2G

Description	2?뭝n?? Notebook DDR Power Controller

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP5218

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ELECTRICAL CHARACTERISTICS (continued) (VIN = 12 V, TA = −40 to 85_C, VCCA = VCCP = VBOOST − VSWDDQ = 5.0 V,

L = 1.8 mH, COUT1 = 150 mF x 2, COUT2 = 22 mF x 2, RL1 = 5.6 kW, R1 = 4.3 kW, R2 = 3.3 kW, RZ1 = 10 kW, RZ2 = 130 W, CP1 = 100 pF,

CZ1 = 2.2 nF, CZ2 = 4.7 nF, for min/max values unless otherwise noted. Typical values are at TA = 25_C.)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

CONTROL SECTION

VDDQEN Pin Threshold High

VDDQEN_H

−

1.4

−

V

VDDQEN Pin Threshold Low

VDDQEN_L

−

0.5

V

VDDQEN Pin Input Current

IIN_

VDDQEN

VDDQEN = 5.0 V

−

1.0

mA

VTTEN Pin Threshold High

VTTEN_H

−

1.4

−

V

VTTEN Pin Threshold Low

VTTEN_L

−

0.5

V

VTTEN Pin Input Current

IIN_VTTEN

VDDQEN = VTTEN = 5.0 V

−

1.0

mA

FPWM Pin Threshold High

FPWM_H

−

1.4

−

V

FPWM Pin Threshold Low

FPWM_L

−

0.5

V

FPWM Pin Input Current

IIN_FPWM

VDDQEN = VTTEN =FPWM

= 5.0 V

−

1.0

mA

PGOOD Pin ON Resistance

PGOOD_R

I_PGOOD = 5.0 mA

−

70

−

W

PGOOD Pin OFF Current

PGOOD_LK

−

1.0

mA

PGOOD LOW−to−HIGH Hold Time, for S5 to S0

thold

(Note 6)

−

200

ms

6. Guaranteed by design, not tested in production.

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