NJT4030PT1G datasheet(3/6 Pages) ONSEMI

Part #	NJT4030PT1G

Description	Bipolar Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJT4030P

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0 Adc)

VCEO(sus)

40

−

Vdc

Emitter−Base Voltage

(IE = 50 mAdc, IC = 0 Adc)

VEBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 40 Vdc)

ICBO

−

100

nAdc

Emitter Cutoff Current

(VBE = 6.0 Vdc)

IEBO

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Collector−Emitter Saturation Voltage

(IC = 0.5 Adc, IB = 5.0 mAdc)

(IC = 1.0 Adc, IB = 10 mAdc)

(IC = 3.0 Adc, IB = 0.3 Adc)

VCE(sat)

−

0.150

0.200

0.500

Vdc

Base−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

VBE(sat)

−

1.0

Vdc

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.0

Vdc

DC Current Gain

(IC = 0.5 Adc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

(IC = 3.0 Adc, VCE = 1.0 Vdc)

hFE

220

200

100

−

400

−

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, f = 1.0 MHz)

Cob

−

40

−

pF

Input Capacitance

(VEB = 5.0 Vdc, f = 1.0 MHz)

Cib

−

130

−

pF

Current−Gain − Bandwidth Product (Note 2)

(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)

fT

−

160

−

MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. fT = |hFE| • ftest

Figure 1. Power Derating

TJ, TEMPERATURE (°C)

150

100

75

50

25

0

0.5

1.0

1.5

2.0

2.5

TC

125

TA

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