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AP2302M-E1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AP2302M-E1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
5 / 13 page 3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet 5 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output Offset Voltage VOS IL=0A (Note 4) -20 0 20 mV Load Regulation DDR I ∆V OUT/ VOUT IL=0 to 1.5A 0.8 2 % IL=0 to -1.5A 0.8 2 DDR II IL=0 to 1.5A 1.2 3 IL=0 to -1.5A 1.2 3 Quiescent Current of VCNTL IQ No Load 3 5 mA Leakage Current in Shutdown Mode ISHDN VREFEN<0.2V, RL=180Ω 36 µA Protection Current Limit ILIMIT 3A Thermal Shutdown Temperature TSHDN 3.3V ≤V CNTL≤5V 150 oC Thermal Shutdown Hysteresis 50 oC Shutdown Function Shutdown Threshold Trigger Output=High 0.8 V Output=Low 0.2 Electrical Characteristics (TJ=25 oC, V IN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.) Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. |
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