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FDC608PZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDC608PZ
Description  P-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDC608PZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDC608PZ Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,Referenced to 25°C
–10
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±12 V,
VDS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–0.4
–1.0
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5V,
ID = –5.8 A
VGS = –2.5V,
ID = –5.0 A
VGS = –4.5V,ID = –5.8A,TJ=125°C
26
38
35
30
43
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –10 V,
ID = –5.8 A
22
S
Dynamic Characteristics
Ciss
Input Capacitance
1330
pF
Coss
Output Capacitance
270
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
230
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
12
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
13
24
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
91
145
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
60
96
ns
Qg
Total Gate Charge
17
23
nC
Qgs
Gate–Source Charge
3
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –5.8 A,
VGS = –4.5 V
6
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.3 A
(Note 2)
–0.7
–1.2
V
trr
Diode Reverse Recovery Time
IF = –5.8 A,
diF/dt = 100A/µs
40
60
ns
Qrr
Diode Reverse Recovery Charge
IF = –5.8 A,
diF/dt = 100A/µs
15
23
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.
78°C/W when mounted on a 1in
2 pad of 2oz copper on FR-4 board.
b.
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


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