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FDC638APZ Datasheet(HTML) 3 Page - Fairchild Semiconductor

Part No. FDC638APZ
Description  P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDC638APZ Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDC638APZ Rev.B
www.fairchildsemi.com
3
Typical Characteristics T
J = 25°C unless otherwise noted
Figure 1.
012
34
0
5
10
15
20
VGS = -4.5V
VGS = -3.5V
-V
DS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -2.0V
VGS = -1.5V
VGS = -3.0V
On-Region Characteristics
Figure2.
0
5
10
15
20
0.6
1.0
1.4
1.8
2.2
VGS = -3.5V
VGS = -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT(A)
VGS = -3.0V
VGS = -2.0V
VGS = -4.5V
NormalizedOn-Resistance
vs Drain Current and Gate Voltage
Figure3. Normalized On- Resistance
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
ID =-4.5A
VGS = -4.5V
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = -2.2A
-VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
VDD = -5V
TJ = -55oC
TJ = 25oC
TJ = 150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current


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