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FDD6N25TF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD6N25TF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6N25 / FDU6N25 Rev. A February 2007 UniFET TM FDD6N25 / FDU6N25 250V N-Channel MOSFET Features • 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) •Low Crss ( typical 5 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics D G S I-PAK FDU Series D-PAK FDD Series G S D G S D Symbol Parameter FDD6N25 / FDU6N25 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 4.4 2.6 A A IDM Drain Current - Pulsed (Note 1) 18 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 45 mJ IAR Avalanche Current (Note 1) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 5mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 50 0.4 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ Max Unit RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W |
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