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FDZ493P Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDZ493P
Description  P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDZ493P Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDZ493P Rev.B(W)
www.fairchildsemi.com
2
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250µA, referenced to 25°C
–13
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16V, VGS = 0V
–1
µA
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–0.6
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
3
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = –4.5V, ID = –4.6A
36
46
m
VGS = –2.5V, ID = –3.6A
58
72
VGS = –4.5V, ID = –4.6A,TJ=125°C
47
65
ID(on)
On to State Drain Current
VGS = –4.5V, VDS = –5V
–10
A
gFS
Forward Transconductance
VDS = –5V, ID = –4.6A
13
S
(note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = –10V, VGS = 0V,
f = 1MHz
754
pF
Coss
Output Capacitance
167
pF
Crss
Reverse Transfer Capacitance
92
pF
Rg
Gate Resistance
f = 1MHz
6
Switching Characteristics (note 2)
td(on)
Turn-On Delay Time
VDD = –10V, ID = –1A
VGS = –4.5V, RGEN = 6Ω
11
20
ns
tr
Rise Time
10
20
ns
td(off)
Turn-Off Delay Time
22
35
ns
tf
Fall Time
17
31
ns
Qg(TOT)
Total Gate Charge at 10V
VDS = –10V ,ID = –4.6A
VGS = –4.5V
7.5
11
nC
Qgs
Gate to Source Gate Charge
1.5
nC
Qgd
Gate to Drain “Miller” Charge
2.0
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
–1.4
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = –1.4A
(Note 2)
–0.7
–1.2
V
trr
Reverse Recovery Time
IF = –4.6A, di/dt = 100A/µs
17
ns
Qrr
Reverse Recovery Charge
5
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB
are guaranteed by design while RθJA is determined by the user's board design.
2: Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
a. 72°C/W when mounted on
a 1 in2 pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
b. 157°C/W when mounted on a
minimum pad of 2 oz copper


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