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CEM9936A Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEM9936A Datasheet(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page  Dual N-Channel Enhancement Mode Field Effect Transistor CEM9936A FEATURES 30V, 5.4A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 30 2.0 22 5.4 ±20 V W A A V 5 - 241 SO-8 1 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead free product is acquired. 2003.July http://www.cetsemi.com 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 62.5 R θJA |
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