CEP09N7A datasheet(3/4 Pages) CET

Part #	CEP09N7A

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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CEP09N7A/CEB09N7A

CEF09N7A

3

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V

GS=10V

I

D=8A

-100

-50

0

50

100

150

200

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

12

8

6

4

2

0

3

6

12

V

GS=5V

V

GS=6V

9

10

V

GS=10,9,8,7V

Ciss

Coss

Crss

2400

2000

1600

1200

800

400

0

5

10

15

20

25

0.4

0.7

1.0

1.3

1.7

2.0

10

0

10-1

10

1

V

GS=0V

1

2

3

4

6

5

12

10

-55 C

25 C

2

4

6

8

0

T

J=125C

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