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CEP09N7A Datasheet(PDF) 3 Page - Chino-Excel Technology |
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3 / 4 page CEP09N7A/CEB09N7A CEF09N7A 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 V GS=10V I D=8A -100 -50 0 50 100 150 200 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 12 8 6 4 2 0 0 3 6 12 V GS=5V V GS=6V 9 10 V GS=10,9,8,7V Ciss Coss Crss 2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 0.4 0.7 1.0 1.3 1.7 2.0 10 0 10-1 10 1 V GS=0V 1 2 3 4 6 5 12 10 -55 C 25 C 2 4 6 8 0 T J=125C |
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