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CEP21A2 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEP21A2 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CEP21A2/CEB21A2 FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 20 0.29 43 75 25 ±12 V W A A V W/ C 4 - 66 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 Lead free product is acquired. 2003.July http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 3.5 R θJC R θJA |
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