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AOP605 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOP605
Description  Plastic Encapsulated Device
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOP605 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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This AOS product reliability report summarizes the qualification result for AOP605. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOP605passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
Package and Die information
III.
Environmental Stress Test Summary and Result
IV.
Reliability Evaluation
V.
Quality Assurance Information
I. Product Description:
The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of
applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications).
AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
TA=25°C
7.5
-6.6
Continuous
Drain Current
TA=70°C
ID
6
-5.3
Pulsed Drain Current
IDM
30
-30
A
TA=25°C
2.5
2.5
Power
Dissipation
TA=70°C
PD
1.6
1.6
W
Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Characteristics : n-channel, Schottky and p-channel
Parameter
Symbol
Device
Typ
Max
Units
Maximum Junction-
to-Ambient
t ≤ 10s
n-ch
40
50
Maximum Junction-
to-Ambient
Steady-
State
RθJA
n-ch
67
80
Maximum Junction-
to-Lead
Steady-
State
RθJL
n-ch
33
40
Maximum Junction-
to-Ambient
t ≤ 10s
p-ch
38
50
Maximum Junction-
to-Ambient
Steady-
State
RθJA
p-ch
66
80
Maximum Junction-
to-Lead
Steady-
State
RθJL
p-ch
30
40
°C/W


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