Preliminary

EDS-100934 Rev B

Product Description

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of

this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are

implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..

All worldwide rights reserved.

-8 0

-6 0

-4 0

-2 0

0

dB

Frequency MHz

SGA-1163

DC-6000 MHz Silicon Germanium

HBT Cascadeable Gain Block

Product Features

from DC - 6 GHz

Applications

Isolation vs. Frequency

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1

Sirenza Microdevices’ SGA-1163 is a Silicon Germanium HBT

Heterostructure Bipolar Transistor (SiGe HBT) amplifier that

offers excellent isolation and flat gain response for applica-

tions to 6 GHz.

This RFIC is a 2-stage design that provides high isolation of

up to 40dB at 2 GHz and is fabricated using the latest SiGe

Vceo > 7V.

These unconditionally stable amplifiers have less than 1dB

gain drift over 125ºC operating range (-40C to +85C) and

are ideal for use as buffer amplifiers in oscillator applica-

tions covering cellular, ISM and narrowband PCS bands.