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BC817-16 Datasheet(PDF) 1 Page - Diodes Incorporated |
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BC817-16 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • For Switching, AF Driver and Amplifier Applications • Complementary PNP Types Available (BC807) • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Pin Connections: See Diagram • Marking (See Page 3): BC817-16 K6A BC817-25 K6B BC817-40 K6C • Ordering & Date Code Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0 ° 8 ° All Dimensions in mm Maximum Ratings @T A = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 800 mA Peak Collector Current ICM 1000 mA Peak Emitter Current IEM 1000 mA Power Dissipation at TSB = 50°C (Note 1) Pd 310 mW Thermal Resistance, Junction to Substrate Backside (Note 1) RθSB 320 °C/W Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 403 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @T A = 25°C unless otherwise specified Characteristic (Note 2) Symbol Min Max Unit Test Condition DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 hFE 100 160 250 60 100 170 250 400 600 — — — — VCE = 1.0V, IC = 100mA VCE = 1.0V, IC = 300mA Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA B Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA Collector-Emitter Cutoff Current ICES — 100 5.0 nA µA VCE = 45V VCE = 25V, Tj = 150°C Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V Gain Bandwidth Product fT 100 — MHz VCE = 5.0V, IC = 10mA, f = 50MHz Collector-Base Capacitance CCBO — 12 pF VCB = 10V, f = 1.0MHz Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm 2 area. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. DS11107 Rev. 15 - 2 1 of 3 www.diodes.com BC817-16/-25/-40 © Diodes Incorporated SPICE MODELS: BC817-16 BC817-25 BC817-40 |
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