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IRF840 Datasheet(PDF) 3 Page - NXP Semiconductors |
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IRF840 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy rated Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Tmb) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V Fig.3. Safe operating area. T mb = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.5. Typical output characteristics. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance. R DS(ON) = f(ID); parameter VGS 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1ms 1s 0.001 0.01 0.1 1 PHP6N60 Zth j-mb, Transient thermal impedance (K/W) 1us 10us 100us 10ms 100ms tp, pulse width (s) D = tp tp T T P t D D = 0.5 0.2 0.05 0.02 single pulse 0.1 0 20 40 60 80 100 120 140 Tmb / C ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 5.5 V 6 V 6.5 V 7 V 10 V PHP8N50 VDS, Drain-Source voltage (Volts) ID, Drain current (Amps) 5 V VGS = 4.5 V Tj = 25 C 1 10 100 1000 VDS / V ID / A 100 10 1 0.1 BUK457-500B tp = 10 us 100 us 1 ms 10 ms 100 ms DC RDS(ON) = VDS/ID 0 5 10 15 20 25 0 0.5 1 1.5 2 PHP8N50 5 V 5.5 V 10 V ID, Drain current (Amps) RDS(on), Drain-Source on resistance (Ohms) 4.5 V VGS = 6 V Tj = 25 C 6.5 V 7 V March 1999 3 Rev 1.000 |
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