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KMZ10B Datasheet(PDF) 2 Page - NXP Semiconductors |
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KMZ10B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Mar 31 2 Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc. PINNING PIN SYMBOL DESCRIPTION 1+VO output voltage 2 GND ground 3 −VO output voltage 4VCC supply voltage Fig.1 Simplified outline SOT195. handbook, halfpage MGD806 123 4 H y H x QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 512 V Hy magnetic field strength −2 − +2 kA/m Hx auxiliary field − 3 − kA/m S sensitivity − 4 − Rbridge bridge resistance 1.6 − 2.6 k Ω Voffset offset voltage −1.5 − +1.5 mV/V mV V ⁄ kA m ⁄ ----------------- CIRCUIT DIAGRAM Fig.2 Simplified circuit diagram. handbook, full pagewidth MLC716 4 3 2 V CC 1 +VO –VO GND |
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Similar Description - KMZ10B |
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