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EM6A9325BG-7.5G Datasheet(PDF) 7 Page - Etron Technology, Inc. |
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EM6A9325BG-7.5G Datasheet(HTML) 7 Page - Etron Technology, Inc. |
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7 / 51 page  EtronTech 4M x 32 LPSDRAM EM6A9325 Preliminary 7 Rev 0.4 June 2003 CL K COMMAND CAS# latency=2 tCK2, DQ's CAS# latency=3 tCK3, DQ's T0 T 1 T2 T3 T4 T5 T6 T7 T8 READ A NOP NOP NOP NOP NOP NOP NOP NOP DOUT A0 DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 DOUT A3 Burst Read Operation(Burst Length = 4, CAS# Latency = 2, 3) The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e. DQM latency is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end of the burst length. It may be interrupted by a BankPrecharge/ PrechargeAll command to the same bank too. The interrupt coming from the Read command can occur on any clock cycle following a previous Read command (refer to the following figure). CLK COMMAND CAS# latency=2 tCK2, DQ's CAS# latency=3 tCK3, DQ's T0 T 1 T2 T3T4 T5T6 T7T8 READ A READ B NOP NOP NOP NOP NOP NOP NOP DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write command. The DQMs must be asserted (HIGH) at least two clocks prior to the Write command to suppress data-out on the DQ pins. To guarantee the DQ pins against I/O contention, a single cycle with high-impedance on the DQ pins must occur between the last read data and the Write command (refer to the following three figures). If the data output of the burst read occurs at the second clock of the burst write, the DQMs must be asserted (HIGH) at least one clock prior to the Write command to avoid internal bus contention. |
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