EtronTech

8Mx32 DDR SDRAM

EM6AA320-XXMS

9

Rev 0.7

May. 2006

D.C. Characteristics

3.3

3.6

4

5

6

Parameter & Test Condition

Symbol

Max

Unit

OPERATING CURRENT : One bank; Active-Precharge;

changing once per clock cycle; Address and control

inputs changing once every two clock cycles.

IDD0

500 460 350 310 280

mA

OPERATING CURRENT : One bank; Active-Read-

changing once per clock cycle

IDD1

600 540 480 440 400

mA

PRECHARGE POWER-DOWN STANDBY CURRENT:

CKE=LOW

IDD2P

120 120 100

80

80

mA

IDLE STANDLY CURRENT : CKE = HIGH;

Address and control inputs changing once per clock

IDD2N

210 200 175 170 170

mA

ACTIVE POWER-DOWN STANDBY CURRENT : one

bank active; power-down mode; CKE=LOW;

IDD3P

120 120 100

80

80

mA

ACTIVE STANDBY CURRENT :

CS#=HIGH;CKE=HIGH; one bank active ;

changing once per clock cycle; DQ,DQS,and DM inputs

changing twice per clock cycle

IDD3N

300 280 260 240 240

mA

OPERATING CURRENT BURST READ : BL=2; READS;

Continuous burst; one bank active; Address and control

lout=0mA;50% of data changing on every transfer

IDD4R

640 610 580 550 520

mA

OPERATING CURRENT BURST Write : BL=2;

WRITES; Continuous Burst ;one bank active; address

and control inputs changing once per clock cycle;

cycle; 50% of data changing on every transfer

IDD4W 550 525 500 480 460

mA

IDD5

750 720 650 610 580

mA

SELF REFRESH CURRENT: Sell Refresh Mode ;

IDD6

8

8

5

5

5

mA

BURST OPERATING CURRENT 4 bank operation:

Four bank interleaving READs; BL=4;with Auto

control inputschang only during Active, READ , or WRITE

command

IDD7

1100 1050 1000 950 900

mA

Note:

1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device.

3. These parameters depend on the cycle rate and these values are measured by the cycle rate

4. Power-up sequence is described in previous page.