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EM6AA320-XXMS Datasheet(PDF) 9 Page - Etron Technology, Inc. |
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EM6AA320-XXMS Datasheet(HTML) 9 Page - Etron Technology, Inc. |
9 / 16 page EtronTech 8Mx32 DDR SDRAM EM6AA320-XXMS 9 Rev 0.7 May. 2006 D.C. Characteristics (VDD =2.5 ± 5%, TA = 0~70 °C) 3.3 3.6 4 5 6 Parameter & Test Condition Symbol Max Unit OPERATING CURRENT : One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two clock cycles. IDD0 500 460 350 310 280 mA OPERATING CURRENT : One bank; Active-Read- Precharge; BL=4; CL=4; tRCDRD=4*tCK; tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs changing once per clock cycle IDD1 600 540 480 440 400 mA PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-down mode; tCK=tCK(min); CKE=LOW IDD2P 120 120 100 80 80 mA IDLE STANDLY CURRENT : CKE = HIGH; CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min); Address and control inputs changing once per clock cycle; VIN=VREF for DQ, DQS and DM IDD2N 210 200 175 170 170 mA ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-down mode; CKE=LOW; tCK=tCK(min) IDD3P 120 120 100 80 80 mA ACTIVE STANDBY CURRENT : CS#=HIGH;CKE=HIGH; one bank active ; tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle IDD3N 300 280 260 240 240 mA OPERATING CURRENT BURST READ : BL=2; READS; Continuous burst; one bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); lout=0mA;50% of data changing on every transfer IDD4R 640 610 580 550 520 mA OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous Burst ;one bank active; address and control inputs changing once per clock cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50% of data changing on every transfer IDD4W 550 525 500 480 460 mA AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min) IDD5 750 720 650 610 580 mA SELF REFRESH CURRENT: Sell Refresh Mode ; CKE<=0.2V;tCK=tCK(min) IDD6 8 8 5 5 5 mA BURST OPERATING CURRENT 4 bank operation: Four bank interleaving READs; BL=4;with Auto Precharge; tRC=tRC(min); tCK=tCK(min); Address and control inputschang only during Active, READ , or WRITE command IDD7 1100 1050 1000 950 900 mA Note: 1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. 2. All voltages are referenced to VSS. 3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during tCK. 4. Power-up sequence is described in previous page. |
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