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AM29DL800BT90SE Datasheet(PDF) 3 Page - Advanced Micro Devices |
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AM29DL800BT90SE Datasheet(HTML) 3 Page - Advanced Micro Devices |
3 / 46 page Publication# 21519 Rev: C Amendment: 4 Issue Date: December 4, 2006 DATA SHEET Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ■ Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29DL800 device ■ High performance — Access times as fast as 70 ns ■ Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or read-while- erase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode ■ Flexible sector architecture — Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode — Any combination of sectors can be erased — Supports full chip erase ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Sector protection — Hardware method of locking a sector to prevent any program or erase operation within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip — Embedded Program algorithm automatically programs and verifies data at specified address ■ Minimum 1,000,000 program/erase cycles guaranteed per sector ■ Package options — 44-pin SO — 48-pin TSOP — 48-ball FBGA ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends or resumes erasing sectors to allow reading and programming in other sectors — No need to suspend if sector is in the other bank ■ Hardware reset pin (RESET#) — Hardware method of resetting the device to reading array data |
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