Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AM29DL322GT70WMIN Datasheet(PDF) 29 Page - SPANSION

Part # AM29DL322GT70WMIN
Description  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Download  58 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

AM29DL322GT70WMIN Datasheet(HTML) 29 Page - SPANSION

Back Button AM29DL322GT70WMIN Datasheet HTML 25Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 26Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 27Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 28Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 29Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 30Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 31Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 32Page - SPANSION AM29DL322GT70WMIN Datasheet HTML 33Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 29 / 58 page
background image
December 4, 2006 25686B10
Am29DL32xG
27
D A TA
SH EE T
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Write Operation Status sec-
tion for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that oc-
curs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then fol-
lowed by the address of the sector to be erased, and
the sector erase command. Table 14 shows the ad-
dress and data requirements for the sector erase com-
mand sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands (for sectors within the same bank) may be writ-
ten. Loading the sector erase buffer may be done in
any sequence, and the number of sectors may be from
one sector to all sectors. The time between these ad-
ditional cycles must be less than 50 µs, otherwise era-
sure may begin. Any sector erase address and
command following the exceeded time-out may or may
not be accepted. It is recommended that processor in-
terrupts be disabled during this time to ensure all com-
mands are accepted. The interrupts can be re-enabled
after the last Sector Erase command is written. Any
command other than Sector Erase or Erase Sus-
pend during the time-out period resets that bank
to the read mode. The system must rewrite the com-
mand sequence and any additional addresses and
commands.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Write Operation Status section for information
on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 µs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for infor-
mation on these status bits.


Similar Part No. - AM29DL322GT70WMIN

ManufacturerPart #DatasheetDescription
logo
Advanced Micro Devices
AM29DL322GT70 AMD-AM29DL322GT70 Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results

Similar Description - AM29DL322GT70WMIN

ManufacturerPart #DatasheetDescription
logo
Advanced Micro Devices
AM29DL322C AMD-AM29DL322C Datasheet
691Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D Datasheet
1Mb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320G AMD-AM29DL320G Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL32XG AMD-AM29DL32XG Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D_05 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DS32XG SPANSION-AM29DS32XG Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DS320G SPANSION-AM29DS320G Datasheet
711Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D_06 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD_06 Datasheet
1Mb / 57P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com