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LM2936MP-3.3 Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM2936MP-3.3 Datasheet(HTML) 7 Page - National Semiconductor (TI) |
7 / 15 page Electrical Characteristics for LM2936–5.0 (Continued) V IN = 14V, IO = 10 mA, TJ = 25˚C, unless otherwise specified. Boldface limits apply over entire operating temperature range Parameter Conditions Min (Note 5) Typical (Note 4) Max (Note 5) Units Output Bypass Capacitance (C OUT) ESR C OUT = 10µF 0.1mA ≤ I OUT ≤ 50mA 0.3 8 Ω Shutdown Input − LM2936BM–5.0 Only Output Voltage, V OUT Output Off, V SD=2.4V, RLOAD = 500 Ω 0 0.010 V Shutdown High Threshold Voltage, V IH Output Off, R LOAD = 500 Ω 2.00 1.1 V Shutdown Low Threshold Voltage, V IL Output On, R LOAD = 500 Ω 1.1 0.60 V Shutdown High Current, I IH Output Off, V SD = 2.4V, RLOAD = 500 Ω 12 µA Quiescent Current Output Off, V SD = 2.4V, RLOAD = 500 Ω Includes I IH Current 30 µA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its specified operating ratings. Note 2: Human body model, 100 pF discharge through a 1.5 k Ω resistor. Note 3: The maximum power dissipation is a function of TJmax, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =(TJmax −TA)/θJA. If this dissipation is exceeded, the die temperature will rise above 150˚C and the LM2936 will go into thermal shutdown. Note 4: Typicals are at 25˚C (unless otherwise specified) and represent the most likely parametric norm. Note 5: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Note 6: To ensure constant junction temperature, pulse testing is used. Typical Performance Characteristics Maximum Power Dissipation (TO-92) Dropout Voltage 00975907 00975908 www.national.com 7 |
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