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AM29LV200BT30DRE1 Datasheet(PDF) 1 Page - Advanced Micro Devices |
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AM29LV200BT30DRE1 Datasheet(HTML) 1 Page - Advanced Micro Devices |
1 / 11 page SUPPLEMENT Publication# 26014 Rev: A Amendment/+2 Issue Date: November 18, 2003 Am29LV200B Known Good Die 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.32 µm process technology ■ High performance — 60R, 70, 90, 120 ns access time ■ Low power consumption (typical values at 5MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Top or Bottom boot block configuration ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write cycle guarantee per sector ■ Compatibility with JEDEC standards — Pinout and software compatible with single- power supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data ■ 20-year data retention at 125 °C ■ Tested to datasheet specifications at temperature ■ Quality and reliability levels equivalent to standard packaged components ■ 500 µm or 280 µm die thickness shipping options |
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