2

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Functional Diagram

Die Characteristics

DIE DIMENSIONS:

(2130µm x 1930µm x 279µm ±25.4µm)

84 x 76 x 11mils ±1mil

METALLIZATION:

Type: Al

Thickness: 12.5k

SUBSTRATE POTENTIAL:

Unbiased (DI)

BACKSIDE FINISH:

Gold

PASSIVATION:

Thickness: 8k

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

76

PROCESS:

Metal Gate CMOS, Dielectric Isolation

Metallization Mask Layout

HS-303RH-T

N

P

IN

D

SBDIP TRUTH TABLE

LOGIC

SW1AND SW2

SW3 AND SW4

0

OFF

ON

1ON

OFF

D3

D1

S1

IN1

D4

D2

S2

IN2