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CNY17F4M Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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CNY17F4M Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 15 page 2 www.fairchildsemi.com CNY17X, CNY17FX, MOC810X Rev. 1.0.6 Absolute Maximum Ratings Symbol Parameters Device Value Units TOTAL DEVICE TSTG Storage Temperature M -40 to +150 °C non M -55 to +150 TOPR Operating Temperature M -40 to +100 °C non M -55 to +100 TSOL Lead Solder Temperature All 260 for 10 sec °C PD Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C M 250 mW non M 250 M 2.94 mW/°C non M 3.30 EMITTER IF Continuous Forward Current M 60 mA non M 100 VR Reverse Voltage All 6 V IF (pk) Forward Current - Peak (1 µs pulse, 300 pps) M 1.5 A non M 1.0 PD LED Power Dissipation 25°C Ambient Derate Linearly From 25°C M 120 mW non M 150 M 1.41 mW/°C non M 1.8 DETECTOR IC Continuous Collector Current All 50 mA VCEO Collector-Emitter Voltage CNY17X/M, CNY17FX/M, MOC8106/7/8 70 V MOC8101/2/3/4/5 30 V VECO Emitter Collector Voltage All 7 V PD Detector Power Dissipation @ 25°C Derate Linearly from 25°C M 150 mW non M 150 M 1.76 mW/°C non M 2.0 |
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