Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

FDC638P Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDC638P
Description  P-Channel 2.5V PowerTrench Specified MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC638P Datasheet(HTML) 2 Page - Fairchild Semiconductor

  FDC638P_01 Datasheet HTML 1Page - Fairchild Semiconductor FDC638P_01 Datasheet HTML 2Page - Fairchild Semiconductor FDC638P_01 Datasheet HTML 3Page - Fairchild Semiconductor FDC638P_01 Datasheet HTML 4Page - Fairchild Semiconductor FDC638P_01 Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
FDC638P Rev F (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –4.5 A
VGS = –2.5 V,
ID = –3.8 A
VGS = –4.5 V, ID = –4.5 TJ=125
°C
39
52
54
48
65
72
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –10 V,
ID = –4.5 A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
1160
pF
Coss
Output Capacitance
195
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
105
pF
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
33
53
ns
tf
Turn–Off Fall Time
VDD = –5 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
12
22
ns
Qg
Total Gate Charge
10
14
nC
Qgs
Gate–Source Charge
2.2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –4.5 A,
VGS = –4.5 V
1.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2)
–0.73
–1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
a)
78°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


Similar Part No. - FDC638P_01

ManufacturerPart #DatasheetDescription
logo
Fairchild Semiconductor
FDC638P FAIRCHILD-FDC638P Datasheet
240Kb / 9P
   P-Channel 2.5V Specified PowerTrenchTM MOSFET
logo
VBsemi Electronics Co.,...
FDC638P VBSEMI-FDC638P Datasheet
1,006Kb / 9P
   P-Channel 30-V (D-S) MOSFET
More results

Similar Description - FDC638P_01

ManufacturerPart #DatasheetDescription
logo
Fairchild Semiconductor
FDC634P FAIRCHILD-FDC634P_01 Datasheet
138Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI4463DY FAIRCHILD-SI4463DY Datasheet
49Kb / 3P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDN302P FAIRCHILD-FDN302P Datasheet
103Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDN342P FAIRCHILD-FDN342P Datasheet
307Kb / 8P
   P-Channel 2.5V Specified PowerTrench??MOSFET
FDR840P FAIRCHILD-FDR840P Datasheet
78Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDC602P FAIRCHILD-FDC602P_01 Datasheet
66Kb / 5P
   P-Channel 2.5V PowerTrench Specified MOSFET
FDW264P FAIRCHILD-FDW264P Datasheet
153Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI6463DQ FAIRCHILD-SI6463DQ Datasheet
97Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDS6576 FAIRCHILD-FDS6576_06 Datasheet
451Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
logo
Guangdong Kexin Industr...
KDS6375 KEXIN-KDS6375 Datasheet
66Kb / 2P
   P-Channel 2.5V Specified PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com