2

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

Operating Ambient Temperature . . . . . . . . . . . . . . . . . 0°C to +70°C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests

DC Electrical Specifications

PARAMETER

DESCRIPTION

CONDITIONS

MIN

TYP

MAX

UNIT

Reference Accuracy

1.24

1.26

1.28

V

Reference Temperature Coefficient

50

ppm/°C

Reference Load Regulation

-1

%

Oscillator Ramp Amplitude

1.15

V

Oscillator Charge Current

200

µA

Oscillator Discharge Current

8

mA

2

6.5

mA

EN = 0

1

1.5

mA

2.5

2.7

V

2.6

3

V

Over-temperature Threshold

135

°C

Over-temperature Hysteresis

20

°C

Internal FET Leakage Current

FET)

20

µA

Peak Current Limit

3A

FET On Resistance

Wafer level test only

60

120

m

Ω

0.2

m

Ω/°C

Output Initial Accuracy

0.970

0.985

1.000

V

Output Line Regulation

0.5

%

Output Load Regulation

0.5

%

Output Temperature Stability

±1

%

Feedback Input Pull Up Current

100

200

nA

EN Input High Level

(Note)

4

V

EN Input Low Level

1V

Enable Pull Up Current

-4

-2.5

µA