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IRFI540NPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFI540NPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  HEXFET® Power MOSFET IRFI540NPbF PD - 94833 11/13/03 VDSS = 100V RDS(on) = 0.052Ω ID = 20A S D G TO-220 FULLPAK l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Parameter Min. Typ. Max. Units RθJC Junction-to-Case 2.8 RθJA Junction-to-Ambient 65 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 54 W Linear Derating Factor 0.36 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 300 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Current 5.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Absolute Maximum Ratings Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. °C/W |
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