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FDP038AN06A0 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP038AN06A0 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  ©2005 Fairchild Semiconductor Corporation FDP038AN06A0 / FDI038AN06A0 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 0.255mH, IAS = 70A. 2: Pulse Width = 100s Device Marking Device Package Reel Size Tape Width Quantity FDP038AN06A0 FDP038AN06A0 TO-220AB Tube N/A 50 units FDI038AN06A0 FDI038AN06A0 TO-262AB Tube N/A 50 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 80A, VGS = 10V - 0.0035 0.0038 Ω ID = 40A, VGS = 6V - 0.0049 0.0074 ID = 80A, VGS = 10V, TJ = 175 oC - 0.0071 0.0078 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 6400 - pF COSS Output Capacitance - 1123 - pF CRSS Reverse Transfer Capacitance - 367 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 80A Ig = 1.0mA 96 124 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 12 15 nC Qgs Gate to Source Gate Charge - 26 - nC Qgs2 Gate Charge Threshold to Plateau - 15 - nC Qgd Gate to Drain “Miller” Charge - 27 - nC tON Turn-On Time VDD = 30V, ID = 80A VGS = 10V, RGS = 2.4Ω - - 175 ns td(ON) Turn-On Delay Time - 17 - ns tr Rise Time - 144 - ns td(OFF) Turn-Off Delay Time - 34 - ns tf Fall Time - 60 - ns tOFF Turn-Off Time - - 115 ns VSD Source to Drain Diode Voltage ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V trr Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 38 ns QRR Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 39 nC |
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