FDN340P Rev E1

Typical Characteristics

0

1

2

3

4

5

0

1

2

3

4

5

6

7

8

9

Q

g

, GATE CHARGE (nC)

I

D

= -3.5A

V

DS

= -5V

-10V

-15V

0

200

400

600

800

1000

0

5

10

15

20

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-V

DC

1s

100ms

100

µs

R

V

SINGLE PULSE

T

A

10ms

1ms

0.001

0.01

0.1

1

10

100

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

= 270° C/W

T

= 25°C

θJA

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 270 °C/W

Duty Cycle, D = t /t

1

2

θJA

θJA

θJA

T - T

= P *R

(t)

A

J

P(pk)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.