FDP75N08_0606 datasheet(3/8 Pages) FAIRCHILD

Part #	FDP75N08_0606

Description	75V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDP75N08 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

1

10

2

V

GS

Top:

15.0V

9.0V

7.5V

7.0V

6.5v

6.0V

5.5V

5.0V

Bottom : 4.5V

* Note :

1. 250µs Pulse Test

2. T

C

=25

0C

V

DS

, Drain-Source Voltage [V]

2

468

10

1

10

100

* Note :

1. V

DS

=40V

2. 250µs Pulse Test

-55

0C

25

0C

150

0C

V

GS

, Gate-Source Voltage [V]

0

25

50

75

100

125

150

175

200

0.007

0.008

0.009

0.010

0.011

0.012

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25

oC

I

D

, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

25

0C

150

0C

* Note :

1. V

GS

=0V

2. 250µs Pulse Test

V

DS

, Source-Drain Violtage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0

10

2030

405060

7080

0

2

4

6

8

10

12

V

DS

= 37.5V

V

DS

= 60V

* Note : I

D

= 75A

Q

G

, Total Gate Charge [nC]

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