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FDS6679 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDS6679 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  March 2005 ©2005 Fairchild Semiconductor Corporation FDS6679 Rev C1 (W) FDS6679 30 Volt P-Channel PowerTrench ® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • –13 A, –30 V. R DS(ON) = 9 mΩ @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V • Extended V GSS range (±25V) for battery applications • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current – Continuous (Note 1a) –13 A – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13’’ 12mm 2500 units |
Similar Part No. - FDS6679_05 |
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Similar Description - FDS6679_05 |
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